Finfet devices with multiple channel lengths

ABSTRACT

A continuous fin having a first segment and a second segment in a semiconductor layer, the first segment is arranged at an angle relative to the second segment, and a first gate and a second gate substantially parallel to each other, the first gate substantially covering sides and a top of a portion of the first segment of the continuous fin, the second gate substantially covering sides and a top of a portion of the second segment of the continuous fin.

BACKGROUND

The present invention generally relates to semiconductor devicemanufacturing, and more particularly to fabricating finFET devices withmultiple channel lengths.

A fin-type field effect transistor “FinFET” is a type of transistor thathas a fin covered by a gate conductor. The gate conductor covers thechannel portion of the fin and source and drain portions of the finextend beyond the coverage of the gate conductor. As Very Large ScaleIntegration (VLSI) drives the reduction of the size of transistors tosmaller dimensions, the power supply voltage is no longer able to bereduced in proportion due to non-scaling threshold voltages oftransistors. This limits the amount of size reduction that can beaccomplished on the gate length of FETs, and FinFETs.

SUMMARY

According to one embodiment of the present invention, a method isprovided. The method may include forming a first pattern in a firsthardmask layer above a mandrel layer, the first pattern including a setof parallel lines, forming a second pattern in a fill layer above themandrel layer, the second pattern including a second set of parallellines, at least one end of one of the parallel lines of the firstpattern is in direct contact with at least one end of one of theparallel lines of the second pattern, and forming a mandrel bytransferring the first and second patterns from the first layer into themandrel layer is directly above a second hardmask layer. The method mayfurther include forming a set of sidewall spacers above the secondhardmask layer along opposite sidewalls of the mandrel, the secondhardmask layer being on top of a substrate, removing the mandrelselective to the set of sidewall spacers and the second hardmask layer,forming a continuous fin by transferring a fin pattern defined by theset of sidewall spacers into the substrate, the continuous fin having afirst segment and a second segment in the substrate, the first segmentis arranged at an angle relative to the second line segment, and forminga first gate and a second gate substantially parallel to each other, thefirst gate substantially covering sides and a top of a portion of thefirst segment of the continuous fin, the second gate substantiallycovering sides and a top of a portion of the second segment of thecontinuous fin.

According to one embodiment of the present invention, a method isprovided. The method may include patterning a continuous fin having afirst segment and a second segment in a semiconductor layer, the firstsegment is arranged at an angle relative to the second line segment, andforming a first gate and a second gate substantially parallel to eachother, the first gate substantially covering sides and a top of aportion of the first segment of the continuous fin, the second gatesubstantially covering sides and a top of a portion of the secondsegment of the continuous fin.

According to one embodiment of the present invention, a structure isprovided. The structure may include a continuous fin having a firstsegment and a second segment in a semiconductor layer, the first segmentis arranged at an angle relative to the second line segment, and a firstgate and a second gate substantially parallel to each other, the firstgate substantially covering sides and a top of a portion of the firstsegment of the continuous fin, the second gate substantially coveringsides and a top of a portion of the second segment of the continuousfin.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The following detailed description, given by way of example and notintended to limit the invention solely thereto, will best be appreciatedin conjunction with the accompanying drawings, in which:

FIG. 1 is a cross-sectional view of a structure at an intermediate stepof fabrication according to an exemplary embodiment.

FIG. 2 is a top view of the structure and illustrates forming a firstpattern in a first hardmask layer according to an exemplary embodiment.

FIG. 2A is a cross section view of FIG. 2, taken along section line A-A.

FIG. 2B is a cross section view of FIG. 2, taken along section line B-B.

FIG. 3 is a top view of the structure and illustrates removing a portionof the a first pattern in a first hardmask layer according to anexemplary embodiment.

FIG. 3A is a cross section view of FIG. 3, taken along section line A-A.

FIG. 3B is a cross section view of FIG. 3, taken along section line B-B.

FIG. 4 is a top view of the structure and illustrates depositing a fillmaterial according to an exemplary embodiment.

FIG. 4A is a cross section view of FIG. 4, taken along section line A-A.

FIG. 4B is a cross section view of FIG. 4, taken along section line B-B.

FIG. 5 is a top view of the structure and illustrates forming a secondpattern in the fill material according to an exemplary embodiment.

FIG. 5A is a cross section view of FIG. 5, taken along section line A-A.

FIG. 5B is a cross section view of FIG. 5, taken along section line B-B.

FIG. 6 is a top view of the structure and illustrates forming a mandrelby transferring the first and second patterns into a mandrel layeraccording to an exemplary embodiment.

FIG. 6A is a cross section view of FIG. 6, taken along section line A-A.

FIG. 6B is a cross section view of FIG. 6, taken along section line B-B.

FIG. 7 is a top view of the structure and illustrates forming sidewallspacers on opposite sidewalls of the mandrel according to an exemplaryembodiment.

FIG. 7A is a cross section view of FIG. 7, taken along section line A-A.

FIG. 7B is a cross section view of FIG. 7, taken along section line B-B.

FIG. 8 is a top view of the structure and illustrates removing themandrel selective to the sidewall spacers and transferring a fin patterninto the second hardmask layer according to an exemplary embodiment.

FIG. 8A is a cross section view of FIG. 8, taken along section line A-A.

FIG. 8B is a cross section view of FIG. 8, taken along section line B-B.

FIG. 9 is a top view of the structure and illustrates removing the setof sidewall spacers, and transferring the fin pattern from the secondhardmask layer into the top semiconductor layer of the substrateaccording to an exemplary embodiment.

FIG. 9A is a cross section view of FIG. 9, taken along section line A-A.

FIG. 9B is a cross section view of FIG. 9, taken along section line B-B.

FIG. 10 is a top view of the structure and illustrates forming one ormore gate electrodes above and between fins formed in the substrateaccording to an exemplary embodiment.

FIG. 10A is a cross section view of FIG. 10, taken along section lineA-A.

FIG. 10B is a cross section view of FIG. 10, taken along section lineB-B.

The drawings are not necessarily to scale. The drawings are merelyschematic representations, not intended to portray specific parametersof the invention. The drawings are intended to depict only typicalembodiments of the invention. In the drawings, like numbering representslike elements.

DETAILED DESCRIPTION

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it can be understood that the disclosed embodiments aremerely illustrative of the claimed structures and methods that may beembodied in various forms. This invention may, however, be embodied inmany different forms and should not be construed as limited to theexemplary embodiments set forth herein. Rather, these exemplaryembodiments are provided so that this disclosure will be thorough andcomplete and will fully convey the scope of this invention to thoseskilled in the art. In the description, details of well-known featuresand techniques may be omitted to avoid unnecessarily obscuring thepresented embodiments.

References in the specification to “one embodiment”, “an embodiment”,“an example embodiment”, etc., indicate that the embodiment describedmay include a particular feature, structure, or characteristic, butevery embodiment may not necessarily include the particular feature,structure, or characteristic. Moreover, such phrases are not necessarilyreferring to the same embodiment. Further, when a particular feature,structure, or characteristic is described in connection with anembodiment, it is submitted that it is within the knowledge of oneskilled in the art to affect such feature, structure, or characteristicin connection with other embodiments whether or not explicitlydescribed.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present. Also the term“sub-lithographic” may refer to a dimension or size less than currentdimensions achievable by photolithographic processes, and the term“lithographic” may refer to a dimension or size equal to or greater thancurrent dimensions achievable by photolithographic processes. Thesub-lithographic and lithographic dimensions may be determined by aperson of ordinary skill in the art at the time the application isfiled.

In the interest of not obscuring the presentation of embodiments of thepresent invention, in the following detailed description, someprocessing steps or operations that are known in the art may have beencombined together for presentation and for illustration purposes and insome instances may have not been described in detail. In otherinstances, some processing steps or operations that are known in the artmay not be described at all. It should be understood that the followingdescription is rather focused on the distinctive features or elements ofvarious embodiments of the present invention.

In general, the invention described below allows for furthercustomization and scaling of finFET devices, by increasing the effectivegate length of some finFETS in an array of transistors withoutincreasing the effective gate length of other finFETS in the transistorarray, and without increasing the overall size of the transistor array.

The present invention generally relates to semiconductor devicemanufacturing, and more particularly to fabricating finFET devices withmultiple channel lengths. Ideally, it may be preferable to fabricate anarray of finFET devices with different channel lengths to achievespecific device performance characteristics and conserve area. One wayto fabricate one or more finFET devices with multiple channel lengthsmay include patterning a continuous fin having multiple segments inwhich at least one of the segments is presented at an angle relative tothe other segments. One embodiment by which to fabricate the continuousfin having at least one angled segment is described in detail below byreferring to the accompanying drawings FIGS. 1-10.

Referring now to FIG. 1 a demonstrative illustration of a structureduring an intermediate step of a method of fabricating finFET deviceswith multiple channel lengths is shown according to one embodiment. Morespecifically, the method can start with providing a structure 100including a second hardmask layer 102, a mandrel layer 104, and a firsthardmask layer 106 all above a substrate 108. FIG. 1 illustrates a crosssection view of the structure 100.

The substrate 108 may include a bulk semiconductor or a layeredsemiconductor such as Si/SiGe, a silicon-on-insulator, or aSiGe-on-insulator. Bulk substrate materials may include undoped Si,n-doped Si, p-doped Si, single crystal Si, polycrystalline Si, amorphousSi, Ge, SiGe, SiC, SiGeC, Ga, GaAs, InAs, InP and all other III/V orII/VI compound semiconductors. A semiconductor-on-insulator (SOI)substrate is illustrated in the figures and is relied upon for thecorresponding discussion. The SOI substrate 108 of the present exampleincludes a base substrate 110, a buried insulator layer 112, and a topsemiconductor layer 114.

The base substrate 110 may be made from any of several knownsemiconductor materials such as, for example, a bulk silicon substrate.Other non-limiting examples include silicon, germanium,silicon-germanium alloy, silicon carbide, silicon-germanium carbidealloy, and compound (e.g. III-V and II-VI) semiconductor materials.Non-limiting examples of compound semiconductor materials includegallium arsenide, indium arsenide, and indium phosphide. Typically thebase substrate 110 may be about, but is not limited to, several hundredmicrons thick. For example, the base substrate 110 may include athickness ranging from 0.5 mm to about 1.5 mm, and ranges there between.

The buried insulator layer 112 may be formed from any of severaldielectric materials. Non-limiting examples include, for example,oxides, nitrides and oxynitrides of silicon. Oxides, nitrides andoxynitrides of other elements are also envisioned. In addition, theburied insulator layer 108 may include crystalline or non-crystallinedielectric material. Moreover, the buried insulator layer 112 may beformed using any of several methods. Non-limiting examples include ionimplantation methods, thermal or plasma oxidation or nitridationmethods, chemical vapor deposition methods and physical vapor depositionmethods. In one embodiment, the buried insulator layer 112 may be about200 nm thick. Alternatively, the buried insulator layer 112 may includea thickness ranging from about 10 nm to about 500 nm, and ranges therebetween.

The top semiconductor layer 114 may include any of the severalsemiconductor materials included in the base substrate 110. In general,the base substrate 110 and the top semiconductor layer 114 may includeeither identical or different semiconducting materials with respect tochemical composition, dopant concentration and crystallographicorientation. In one particular embodiment of the present invention, thebase substrate 110 and the top semiconductor layer 114 includesemiconducting materials that include at least differentcrystallographic orientations. Typically the base substrate 110 or thetop semiconductor layer 114 include a {110} crystallographic orientationand the other of the base substrate 110 or the top semiconductor layer114 includes a {100} crystallographic orientation. Typically, the topsemiconductor layer 114 includes a thickness ranging from about 5 nm toabout 100 nm, and ranges there between. Methods for making the topsemiconductor layer 114 are well known in the art. Non-limiting examplesinclude SIMOX (Separation by Implantation of Oxygen), wafer bonding, andELTRAN® (Epitaxial Layer TRANsfer). While the current embodimentdescribes the use of a SOI wafer, a bulk wafer can also be used whereburied insulator layer 112 is not present.

The second hardmask layer 102 may be deposited on top of the substrate108. The second hardmask layer 102 may include any dielectric materialsuitable for use as a hardmask, such as, for example, a nitride. In anembodiment, the second hardmask layer 102 may include silicon nitride,which may be formed using conventional deposition methods, for example,chemical vapor deposition, atomic layer deposition, physical vapordeposition, sputtering, or other like deposition techniques. The secondhardmask 102 may be sufficiently thick to properly function as a maskduring subsequent patterning steps. In an embodiment, the secondhardmask 102 may have a thickness ranging from about 5 nm to about 50nm, and ranges there between. The first hardmask 106, on top of themandrel layer 104, is substantially similar in all respects to thesecond hardmask layer 102.

The mandrel layer 104 can be formed on top of the second hardmask layer102. The mandrel layer 104 can include amorphous silicon or any siliconbased compound, for example, silicon nitride, silicon oxide, or siliconcarbon, or alternatively amorphous carbon. The mandrel layer 104 maypreferably include a material that is different enough from the materialof the sidewall spacers (described below) and the material of the secondhardmask layer 102 so that it can be selectively removed. The particularmaterial chosen can partly depend upon the desired pattern to be formedand the materials chosen in subsequent steps discussed below. Themandrel layer 104 may be formed using conventional deposition methods,for example, chemical vapor deposition, atomic layer deposition,physical vapor deposition, sputtering, or other like depositiontechniques. The mandrel layer 104 may be sufficiently thick to properlyfunction as a mask during subsequent patterning steps. In oneembodiment, the mandrel layer 104 can be formed with a verticalthickness ranging from about 10 nm to about 100 nm, and ranges therebetween.

Referring now to FIGS. 2 and 2A a demonstrative illustration of astructure during an intermediate step of the method of fabricatingfinFET devices with multiple channel lengths is shown according to oneembodiment. More specifically, the method include with forming a firstpattern 116 in the first hardmask layer 106. FIG. 2 illustrates a crosssection view of the structure 100. FIG. 2A is a cross section view ofFIG. 2 taken along section line A-A. FIG. 2B is a cross section view ofFIG. 2 taken along section line B-B.

After depositing the first hardmask layer 106, it may be etched to formthe first pattern 116 according to lithographic patterning and etchingtechniques known in the art. The first pattern 116 may include a set ofparallel lines or “fins,” etched from the first hardmask 106. Asillustrated in the figures the first pattern 116 includes three parallellines; however, it may include any number of parallel lines. Theparallel lines of the first pattern 116 may be any length, any width,and have any spacing to produce the final finFET array.

In an embodiment, the width or spacing of the parallel lines of thefirst pattern 116 may be sublithographic, or smaller than a lithographicminimum dimension. The term “sublithographic” may refer to a dimensionor size less than current dimensions achievable by photolithographicprocesses, and the term “lithographic” or “lithographic minimumdimension” may refer to a dimension or size equal to or greater thancurrent dimensions achievable by photolithographic processes. Thesublithographic and lithographic dimensions may be determined by aperson of ordinary skill in the art at the time the application isfiled. While a “lithographic minimum dimension” and a “sublithographicdimension” are defined only in relation to a lithography tool andnormally change from generation to generation of semiconductortechnology, it is understood that the lithographic minimum dimension andthe sublithographic dimension are to be defined in relation to the bestperformance of lithography tools available at the time of semiconductormanufacturing. As of 2015, the lithographic minimum dimension is about20 nm and is expected to shrink in the future.

Referring now to FIGS. 3 and 3A a demonstrative illustration of astructure during an intermediate step of the method of fabricatingfinFET devices with multiple channel lengths is shown according to oneembodiment. More specifically, the method can include removing a portionof the first pattern 116. FIG. 3 illustrates a cross section view of thestructure 100. FIG. 3A is a cross section view of FIG. 3 taken alongsection line A-A. FIG. 3B is a cross section view of FIG. 3 taken alongsection line B-B.

The structure 100 may include a first region 118 and a second region120. In the present step, a portion of the first pattern 116 may beremoved from the second region 120 according to lithographic patterningand etching techniques known in the art. First a photoresist or mask 121may be deposited and patterned to protect a portion of the first pattern116 in the first region 118 while another portion of the first pattern116 is removed from the second region 120. The first pattern 116 mayremain in the first region 118. In the example illustrated in thefigures, two first regions 118 may be separated by a single secondregion 120. As such, a middle portion of the first pattern 116 may beremoved. The portion of the first pattern 116 may preferably be removedselective to the mandrel layer 104. Alternatively, an end portion, andnot a center portion, of the first pattern 116 may be removed asdescribed above.

Referring now to FIGS. 4 and 4A a demonstrative illustration of astructure during an intermediate step of the method of fabricatingfinFET devices with multiple channel lengths is shown according to oneembodiment. More specifically, the method can include forming a fillmaterial 122 in the second region 120. FIG. 4 illustrates a crosssection view of the structure 100. FIG. 4A is a cross section view ofFIG. 4 taken along section line A-A. FIG. 4 B is a cross section view ofFIG. 4 taken along section line B-B.

The fill material 122 may be blanket deposited on top of the mandrellayer 104 in the second region 120 and above the photoresist 121 in thefirst regions 118. The fill material 122 may include any dielectricmaterial suitable for use as a mask, and which may be patterned (etched)selective to both the mandrel layer 104 and the first hardmask layer106. For example, if the first hardmask layer 106 is a nitride, the fillmaterial 122 may preferably be an oxide. In an embodiment, the fillmaterial 122 may include silicon oxide, which may be formed usingconventional deposition methods, for example, chemical vapor deposition,atomic layer deposition, physical vapor deposition, sputtering, or otherlike deposition techniques. It should be noted that the fill material122 may preferably be deposited at temperatures less than 200° C. so asnot to damage the photoresist 121.

A chemical mechanical polishing technique may be used to remove excessfill material 122 from above the photoresist 121 such that an uppersurface of the fill material 122 is substantially flush with an uppersurface of the photoresist 121 in the first region 118. In anembodiment, the fill material 122 may preferably be deposited onlywithin the second region 120. This may be accomplished, for example, byforming the fill material 122 before removing the photoresist 121 usedto remove the portion of the first pattern 116.

Referring now to FIGS. 5 and 5A a demonstrative illustration of astructure during an intermediate step of the method of fabricatingfinFET devices with multiple channel lengths is shown according to oneembodiment. More specifically, the method can include forming a secondpattern 124 in the fill material 122. FIG. 5 illustrates a cross sectionview of the structure 100. FIG. 5A is a cross section view of FIG. 5taken along section line A-A. FIG. 5B is a cross section view of FIG. 5taken along section line B-B.

After depositing the fill material 122, it may be etched to form thesecond pattern 124 according to lithographic patterning and etchingtechniques known in the art. The second pattern 124 may include a set ofparallel lines or “fins,” etched from the fill material 122 selective tothe mandrel layer 104. In an embodiment, as illustrated in the figuresthe second pattern 124 includes two parallel lines; however, it mayinclude any number of parallel lines. Like the first pattern 116, theparallel lines of the second pattern 124 may be any width and have anyspacing to produce the desired finFET array. The width and spacing ofthe parallel lines of the second pattern 124 may be similar to that ofthe parallel lines of the first pattern 116. In a preferred embodiment,the parallel lines of the second pattern 124 may be in direct contactwith the parallel lines of the first pattern 116. More specifically,ends of the first pattern 116 are in direct contact with ends of thesecond pattern 124. In an embodiment, the spacing between the parallellines of the first pattern 116 and the size of the second region 120 maydictate the length and angle of the parallel lines of the second pattern124.

The parallel lines of the second pattern 124 are positioned at an anglerelative to the parallel lines of the first pattern 116. The parallellines of the second pattern 124 may be patterned at any angle relativeto the parallel lines of the first pattern 116 subject to knownfabrication limitations and current ground rules. It should be notedthat the angle of the parallel lines of the second pattern 124 relativeto the parallel lines of the first pattern 116 may dictate an effectivechannel length of one or more subsequently fabricated finFET devices inthe finFET array. After patterning and removing excess fill material122, the photoresist 121 may be removed from the first regions 118according to known techniques.

A chemical mechanical polishing technique may be used to recess thesecond pattern 124 in the fill material 122 such that an upper surfaceof the second pattern 124 in the fill material 122 is substantiallyflush with an upper surface of the first pattern 116 in the firsthardmask layer 106.

Referring now to FIGS. 6 and 6A a demonstrative illustration of astructure during an intermediate step of the method of fabricatingfinFET devices with multiple channel lengths is shown according to oneembodiment. More specifically, the method can include transferring thefirst pattern 116 and the second pattern 124 into the mandrel layer 104to form mandrels 126. FIG. 6 illustrates a cross section view of thestructure 100. FIG. 6A is a cross section view of FIG. 6 taken alongsection line A-A. FIG. 6B is a cross section view of FIG. 6 taken alongsection line B-B.

The mandrel layer 104 is then lithographically patterned to create themandrels 126. The mandrels 126 can be formed by applying knownpatterning techniques involving exposing a photo-resist and transferringthe exposed pattern of the photo-resist by etching the mandrel layer104. More specifically, the first pattern 116 defined by the firsthardmask layer 106 and the second pattern 124 defined by the fillmaterial 122 may be transferred into the mandrel layer 104 to form themandrels 126. In an embodiment, where the first hardmask layer 106 is anitride and the fill material is an oxide, a reactive-ion-etchingtechnique using a fluorocarbon or chlorine, or bromine based etchantwith additional gases such as O2 or Ar may be used. The second hardmasklayer 102 may function as an etch stop during patterning of the mandrellayer 104.

Referring now to FIGS. 7 and 7A a demonstrative illustration of astructure during an intermediate step of the method of fabricatingfinFET devices with multiple channel lengths is shown according to oneembodiment. More specifically, the method can include forming sidewallspacers 128 on opposite sidewalls of the mandrels 126. FIG. 7illustrates a cross section view of the structure 100. FIG. 7A is across section view of FIG. 7 taken along section line A-A. FIG. 7B is across section view of FIG. 7 taken along section line B-B.

First, a layer of dielectric material may be conformally deposited ontop of the structure 100. Specifically, the layer of dielectric materialmay be deposited directly on the first hardmask layer 102 and coveringthe mandrels 126. It should be noted that the second hardmask 106 andthe fill layer 122 may or may not be present during deposition of thedielectric material and subsequent formation of the sidewall spacers128. In an embodiment, the layer of dielectric material can include, forexample, silicon nitride or silicon oxide. It may be preferable, in somecases, to fabricate the sidewall spacers 128 from a material having asubstantially different etch rate than that of the second hardmask layer102 to effect good etch selectivity during subsequent patterning steps.In an embodiment, the layer of dielectric material may preferablyinclude an oxide, for example, silicon oxide. The layer of dielectricmaterial can be deposited with a conformal deposition technique, usingany known atomic layer deposition technique, molecular layer depositiontechniques, or other known conformal deposition techniques. In anembodiment, the layer of dielectric material can have a substantiallyconformal and uniform thickness ranging from about 5 nm to about 20 nm,and ranges there between.

Next, a directional anisotropic etching technique may be used to removea portion of the layer of dielectric material from horizontal surfacesof the structure 100, while leaving it on the sidewalls of the mandrels126. For example, a reactive-ion-etching technique may be used to removeportions of the layer of dielectric material from directly above thesecond hardmask layer 102 and from a top surface of the second hardmasklayer and the fill material 122, or alternatively, from a top surface ofthe mandrels 126. The portion of the layer of dielectric materialremaining along opposite sidewalls of the mandrels 126, form thesidewall spacers 128. Furthermore, the mandrels 126 and the sidewallspacers 128 should each include materials that would allow the mandrel126 to be subsequently removed selective to the sidewall spacers 128.Here, it should also be noted that the sidewall spacers 128 depicted inthe figures are for illustration purposes and generally can have aslightly different shape from those shown. For example, the sidewallspacers 128 can have rounded corners which may naturally form during thedirectional etching process as is known in the art.

The sidewall spacers 128 may have a lateral width ranging substantiallyequal to the conformal thickness of the layer of dielectric materialabove. In an embodiment, the lateral width of the sidewall spacers 128may preferably be sublithographic as previously described above. In anembodiment, for example, the sidewall spacers 128 may have a lateralwidth ranging from about 5 nm to about 15 nm, and ranges there between.It is possible to adjust spacer width based on etch bias or loss ofmaterial during process to meet final technology target dimension. Thesidewall spacers 128 define a fin pattern which may subsequently betransferred into underlying layers, including the second hardmask layer102 and the top semiconductor layer 114.

Referring now to FIGS. 8 and 8A a demonstrative illustration of astructure during an intermediate step of the method of fabricatingfinFET devices with multiple channel lengths is shown according to oneembodiment. More specifically, the method can include removing themandrels 126 selective to the sidewall spacers 128 and transferring thefin pattern into the second hardmask layer 102. FIG. 8 illustrates across section view of the structure 100. FIG. 8A is a cross section viewof FIG. 8 taken along section line A-A. FIG. 8B is a cross section viewof FIG. 8 taken along section line B-B.

First, a non-selective breakthrough etch may be applied to exposed themandrel 126, if necessary to remove some of all of the first hardmask106 and/or the fill material 122. In an embodiment, the mandrel 126 issilicon, and the sidewall spacers 128 are an oxide. In such cases, thesilicon may be removed selective to the oxide. Furthermore, the mandrel126 be removed selective to the second hardmask layer 102. In anembodiment, the mandrel 126 can be removed using a typical dry etchingincluding HBr in which the sidewall spacers 130 won't be trimmed orminimal loss.

Next, the second hardmask layer 102 may be etched to expose the topsemiconductor layer 114. In doing so, the sidewall spacers 128 maysimultaneously be lowered. A directional anisotropic etching techniquesuch as a reactive-ion-etching technique can be used to etch the secondhardmask layer 102. In an embodiment, where the second hardmask layer102 is silicon nitride a reactive-ion-etching technique using afluorocarbon based etchant with additional gases such as O2 or Ar may beused. In the present step, the sidewall spacers 128 can function as amask, and can have high etch selectivity relative to the second hardmasklayer 102.

Referring now to FIGS. 9 and 9A a demonstrative illustration of astructure during an intermediate step of the method of fabricatingfinFET devices with multiple channel lengths is shown according to oneembodiment. More specifically, the method can include removing thesidewall spacers 128, and transferring the fin pattern from the secondhardmask layer 102 into the top semiconductor layer 114 of the substrate108. Transfer of the fin pattern into a portion of the top semiconductorlayer 114 creates fins 130 for the finFET array. FIG. 9 illustrates across section view of the structure 100. FIG. 9A is a cross section viewof FIG. 9 taken along section line A-A. FIG. 9B is a cross section viewof FIG. 9 taken along section line B-B.

The sidewall spacers 128 may be removed selective to the second hardmasklayer 102 and the top semiconductor layer 114 according to knowntechniques. In an embodiment, doing so will require etching oxides ofthe sidewall spacers 128 selective to nitrides of the second hardmasklayer 102.

Next, the fin pattern may be transferred from the second hardmask layer102 into the top semiconductor layer 114. In doing so, the topsemiconductor layer 114 may preferably be etched selective to the secondhardmask layer 102 according to known techniques. The top semiconductorlayer 114 may be etched to a desired depth to form the fins 130. Thedesired depth can depend on the ultimate function of the final finFETarray. In an embodiment, the top semiconductor layer 114 may be etchedto a depth sufficient to expose the buried insulator layer 112, asillustrated.

A directional etching technique such as a reactive-ion-etching techniquecan be used to etch the top semiconductor layer 114 and form the fins130. In an embodiment, the top semiconductor layer 114 can be etchedwith a reactive-ion-etching technique using a chlorine or a brominebased etchant. In the present step, the second hardmask 102 functions asa mask, and can have high etch resistance to the particular etchingtechnique(s) applied to etch the top semiconductor layer 114. Finally,the second hardmask layer 102 can be removed in subsequent steps usingany suitable removal technique known in the art.

It should be noted that the lateral thickness or width of the sidewallspacers 128 is dependent on the deposited thickness of the layer ofdielectric material. Furthermore, the lateral thickness or width of thesidewall spacers 128 is directly related to a width of the fins 130.Therefore, the deposited thickness of the layer of dielectric materialis directly related to a width of the fins 130.

The fins 130 may include one or more continuous fins having multiplesegments in which at least one of the segments is presented at an anglerelative to the other segments. In the present embodiment, one or moreof the fins 130 may include three segments (132, 134, 136) in which thefirst segment 132 and third segment 136 may be fabricated in the firstregion 118 of the structure 100 and the second segment 134 may befabricated in the second region 120 of the structure 100. Also, asillustrated in the present embodiment, the first segment 132 may befabricated substantially parallel to the third segment 136, and thesecond segment 134 may be fabricated at an angle relative to the firstand third segments 132, 136. In an embodiment, an angle between thefirst segment of the continuous fin and the second segment of thecontinuous fin is greater than 90 degrees. In general, the secondsegment 134 may be in direct contact with both to the first and thirdsegments 132, 136, and therefore form a continuous fin structures havingelectrical continuity throughout.

In an alternative embodiment, one or more of the fins 130 may includeonly two segments (e.g. 132, 134) in which the first segment 132 may befabricated in the first region 118 of the structure 100 and the secondsegment 134 may be fabricated in the second region 120 of the structure100. Further, the second segment 134 may be fabricated at an anglerelative to the first segment 132.

It should be noted that various different approaches and processingtechniques know in the art may be used to trim the fins 130 and definethe final finFET array. For example, a cut mask (not shown) may be usedto trim the ends of the fins 130. For purposes of the presentdescription, the fins 130 are illustrated in FIGS. 9, 9A and 9B afterthe fins 130 have been trimmed.

Referring now to FIGS. 10 and 10A a demonstrative illustration of astructure during an intermediate step of the method of fabricatingfinFET devices with multiple channel lengths is shown according to oneembodiment. More specifically, the method can include forming one ormore gate electrodes 138. 140 above and between the fins 130. FIG. 10illustrates a cross section view of the structure 100. FIG. 10A is across section view of FIG. 10 taken along section line A-A. FIG. 10B isa cross section view of FIG. 10 taken along section line B-B.

A typical replacement gate or gate last fabrication technique, or a gatefirst fabrication technique well known in the art may be used to formthe gate electrodes 138 and complete the formation of the structure 100.In an embodiment, a gate oxide (not shown) may be deposited prior toforming the gate electrodes 138, 140. The gate oxide may include any ofthe high-k dielectric materials known in the art, for example HfO2, anddeposited with methods such as atomic layer deposition (ALD), chemicalvapor deposition (CVD), or physical vapor deposition (PVD). The gateelectrodes 138, 140 may include one or more work function metals such asTiN, TaN, or TiC, to achieve the desired device threshold voltage andone or more low resistance metal such as W, Al, or Co. The gateelectrodes 138, 140 may be formed directly on top of the buriedinsulator layer 112 and substantially surround at least three sides ofthe fins 130, as illustrated. In an embodiment, all gate electrode 138may preferably be formed parallel to one another.

As illustrated in the figures three parallel gate electrodes 138 may beformed across eight different fins 130. More specifically, a first gateelectrode 138 may be formed in the first region 118 and a second gateelectrode 140 may be formed in the second region 120. The first gateelectrode 138 in the first region 118 crosses six different fins 130,four of which are continuous multi-segment fins and two are straightfins. The second gate electrode 140 in the second region 120 crossesonly four continuous multi-segment fins 130. The structure 100 isillustrated with a discrete number of fins 130 and gate electrodes 138;however, it may include any number of fins 130 and gate electrodes 138in any number of configurations, as desired by design.

More specifically, in an embodiment, the first gate electrode 138 maycross the first segments 132 of the continuous multi-segment fins 130and the second gate electrode 140, parallel to the first gate electrode138, may cross the second segments 132 of the continuous multi-segmentfins 130. In an embodiment, the first gate electrode 138 may cross thefirst segments 132 of the continuous multi-segment fins 130 at a firstangle and second gate electrode 140 may cross the second segments 134 ofthe continuous multi-segment fins 130 at a second angle, in which thefirst angle is different from the second angle. In an embodiment, thefirst gate electrode 138 may be substantially perpendicular to the firstsegments 132 of the continuous multi-segment fins 130, and the secondgate electrode 140 is parallel to the first gate electrode 138 and maynot be perpendicular to the second segments 134 of the continuousmulti-segment fins 130. In an embodiment, the structure 100 may includeonly a single continuous multi-segment fin 130 with two parallel gateelectrodes 132 formed across different segments, where one segment is atan angle relative to the other.

With specific reference to FIG. 10B, the first gate electrode 138 in thefirst region 118 may have an effective gate length (l₁) and the secondgate electrode 140 in the second region 120 may have an effective gatelength (l₂). It should be noted that effective gate length is synonymousto gate width or effective gate width for purposes of this discussion.In all cases, the effective gate length as illustrated in the figures ismeasured in a direction parallel to the length of the fin, or segment ofthe fin, between opposite sides of the gate electrodes. The effectivegate length (l₂) of the second gate electrode 140 may be larger than theeffective gate length (l₁) of the first gate electrode 138 because ofthe angle of the gate electrode relative to the segment of the fin.Stated differently, because the second segments 134 of the continuousmulti-segment fins 130 are angled with respect to the second gateelectrode 140, the effective gate length (l₂) is longer than it wouldotherwise be if they were perpendicular.

In an embodiment, the first and second gate electrodes 138, 140 may befabricated with a width (W₁, W₂) ranging from about 10 nm to about 20 nmand a pitch of about 40 nm. The fins 130 may be fabricated with a widthranging from about 5 nm to about 15 nm and a pitch of about 30 nm. Assuch, the effective gate length (l₁) of the first gate electrode 138 maybe about 10 nm to about 20 nm, the same as its nominal width, and theeffective gate length (l₂) of the second gate electrode 140 may rangefrom about 15 nm to about 30 nm, or larger than a nominal width of thegate electrode itself.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the invention.The terminology used herein was chosen to best explain the principles ofthe embodiment, the practical application or technical improvement overtechnologies found in the marketplace, or to enable others of ordinaryskill in the art to understand the embodiments disclosed herein.

What is claimed is:
 1. A structure comprising: a continuous fin having afirst segment and a second segment in a semiconductor layer, the firstsegment is arranged at an angle relative to the second segment; and afirst gate and a second gate substantially parallel to each other, thefirst gate substantially covering sides and a top of a portion of thefirst segment of the continuous fin, the second gate substantiallycovering sides and a top of a portion of the second segment of thecontinuous fin.
 2. The structure of claim 1, wherein the continuous finfurther comprises a third segment and a third gate substantiallycovering sides and a top of the third segment, the third segment isparallel to the first segment and the third gate is substantiallyparallel to both the first gate and the second gate.
 3. The structure ofclaim 1, wherein the first gate is substantially perpendicular to thefirst segment of the continuous fin.
 4. The structure of claim 1,wherein an angle between the first segment and the second segment isgreater than 90 degrees.
 5. The structure of claim 1, wherein a width ofthe continuous fin is sublithographic in dimension.
 6. The structure ofclaim 1, wherein a length of the portion of the second segment coveredby the second gate is greater than a length of the portion of the firstsegment covered by the first gate, the lengths being measured betweenopposite sides of the first and second gates.
 7. A structure comprising:a continuous fin having a first segment and a second segment in asemiconductor layer, the first segment is arranged at an angle greaterthan 90 degrees relative to the second segment; and a first gate and asecond gate substantially parallel to each other, the first gatesubstantially covering sides and a top of a portion of the first segmentof the continuous fin, the second gate substantially covering sides anda top of a portion of the second segment of the continuous fin.
 8. Thestructure of claim 7, wherein the continuous fin further comprises athird segment and a third gate substantially covering sides and a top ofthe third segment, the third segment is parallel to the first segmentand the third gate is substantially parallel to both the first gate andthe second gate.
 9. The structure of claim 7, wherein the first gate issubstantially perpendicular to the first segment of the continuous fin.10. The structure of claim 7, wherein a width of the continuous fin issublithographic in dimension.
 11. The structure of claim 7, wherein alength of the portion of the second segment covered by the second gateis greater than a length of the portion of the first segment covered bythe first gate, the lengths being measured between opposite sides of thefirst and second gates.
 12. A structure comprising: a continuoussemiconductor fin having a first segment, a second segment, and a thirdsegment, the first segment is arranged at an angle relative to thesecond segment, the third segment is parallel to the first segment; anda first gate, a second gate, and a third gate substantially parallel toeach other, the first gate substantially covering sides and a top of aportion of the first segment of the continuous semiconductor fin, thesecond gate substantially covering sides and a top of a portion of thesecond segment of the continuous semiconductor fin; and the third gatesubstantially covering sides and a top of a portion of the third segmentof the continuous semiconductor fin.
 13. The structure of claim 12,wherein the first gate is substantially perpendicular to the firstsegment of the continuous semiconductor fin.
 14. The structure of claim12, wherein an angle between the first segment and the second segment isgreater than 90 degrees.
 15. The structure of claim 12, wherein a widthof the continuous semiconductor fin is sublithographic in dimension. 16.The structure of claim 12, wherein a length of the portion of the secondsegment covered by the second gate is greater than a length of theportion of the first segment covered by the first gate, the lengthsbeing measured between opposite sides of the first and second gates.